TSM80N1R2CI C0G
Manufacturer Product Number:

TSM80N1R2CI C0G

Product Overview

Manufacturer:

Taiwan Semiconductor Corporation

DiGi Electronics Part Number:

TSM80N1R2CI C0G-DG

Description:

MOSFET N-CH 800V 5.5A ITO220AB
Detailed Description:
N-Channel 800 V 5.5A (Tc) 25W (Tc) Through Hole ITO-220AB

Inventory:

12897909
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TSM80N1R2CI C0G Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
685 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220AB
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
TSM80

Datasheet & Documents

Additional Information

Other Names
TSM80N1R2CI C0G-DG
TSM80N1R2CIC0G
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
TSM80N1R2CI
MANUFACTURER
Taiwan Semiconductor Corporation
QUANTITY AVAILABLE
0
DiGi PART NUMBER
TSM80N1R2CI-DG
UNIT PRICE
2.88
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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